Electron-wave interaction in submicrometer gate field-effect transistors

The electromagnetic wave effects on the behavior of submicrometer gate FETs is investigated by coupling a full wave solution of Maxwell's equations to the active device model. Three-dimensional simulations verify the expected device-wave interaction. According to simulation results, energy transfer between electrons and the EM wave takes place along the device width. This effect is represented by a build-up in the wave amplitude and an increase in the device gain.<
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