Low-noise high-power heterojunction bipolar transistors for mixed-mode applications

A novel AlGaAs-GaAs heterojunction bipolar transistor (HBT), which provides state-of-the-art noise and record power density through X-band, was developed. This performance is due to advanced design and fabrication techniques. This HBT is readily transferable to mixed-mode applications, such as portable telephones and radar transmit/receive modules.<
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