Numerical Analysis of Destruction Mechanisms of NPT- and FS-IGBTs in Forward Blocking Mode

We studied different destruction modes of planar cell 1200V "non-punch-through" and "fieldstop" insulated gate bipolar transistors in forward blocking mode using simulation tools. Branches of negative differential resistance are explained with certain device properties and a dynamic distortion of the electric field. Careful design of the device avoid these regions which may lead to current concentration and finally device destruction