Low-voltage high-performance silicon RF power transistors

The high-frequency power performance of mounted discrete silicon bipolar transistors, that have been optimised for low-voltage application, has been evaluated. At 1.8 GHz and 3.5 V a power gain of 14 dB and a power-added efficiency of 60% at an RF power density of 1 W/mm emitter length have been measured. These results demonstrate that also at low supply voltages silicon BJTs have excellent power amplifying capabilities.<
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