Damage-Layer-Mediated H Diffusion During SiN:H Processing: A Comprehensive Model

We describe a refined surface-damage model for H transport during SiN:H processing to explain recent observations in H passivation. We propose that surface-damaged layers act not only as a source of trapped H, but can also mediate H between Si and SiN:H. This capability enables exchange of H between SiN:H and Si, making passivation characteristics dependent on the surface damage as well as composition of the nitride. It also explains many other observations