Dislocation Generation in Si: A Thermo-Mechanical Model Based on Measurable Parameters

A thermo-mechanical model for predicting dislocation distribution generated by thermal stresses in Si is described. We use an experimentally determined dislocation distribution in response to a predetermined flux to establish "initial" density. The basic thermal model and the procedure for determining this parameter are described. This approach can be applied to crystal growth and other cell fabrication steps to establish thermal conditions that can minimize dislocation generation for improved solar cell performance