Amorphous Transparent Conducting Oxides (TCOS) Deposited at T ⩽ 100 °C

We have employed a combinatorial high-throughput approach to explore transparent conducting oxide (TCO) materials deposited at T
_s
⩽100°C. For In-Zn-O (IZO) thin films deposited by sputtering from ceramic metal oxide targets at 100°C in argon, a broad maximum in the as-deposited conductivity is found for x~ 0.55 to 0.85 in In
_x
Zn
_1-x
O
_y
with σ
_max
ap3000 Omega
^-1
-cm
^-1
for xap0.8. This conductivity maximum correlates with the composition range found to be amorphous. These amorphous In-Zn-O (a-IZO) films are smooth, with an RMS roughness of ~0.3 nm. Post-deposition annealing experiments show that the a-IZO materials remain amorphous after 1 hour anneals at up to 600°C in either air or argon