Variable output, high efficiency-low distortion S-band power amplifiers and their performances under single tone and noise power excitations

A family of one stage, high efficiency-low distortion variable output power MIC amplifiers for narrow band applications at S-band was developed. The amplifiers utilize 0.5 /spl mu/m gatelength PsHEMT devices with 4.8 mm to 19.2 mm peripheries. High efficiency (>60%) is maintained under CW operation at 2.45 GHz over 12 dB of input range by varying Vds between 2 and 8 V. At 2.45 GHz, amplifiers with 19.2 mm devices biased at Vds=8 V, provide 12 W of single tone power at 62% PAE with 13 dB gain (1 dBc) and 36.5 dBm noise power at NPR=17 dB (40 MHz wide noise with 700 kHz notch) with 43% efficiency.<
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