A novel algorithm for bias-dependent cascode FET modeling

In this paper we present a novel algorithm for a flexible table-based, bias-dependent, small-signal cascode MESFET model. The model utilizes 2-port DC and RF characterizations of a single-gate, common-source MESFET in contrast to the typical 3-port characterization approach typically applied to dual-gate and cascode FETs. Cascode FET simulations enabled by the new model are shown to track measured data over varying bias conditions.<
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