A 0.7 V, 23 GHz, low cost BiCMOS amplifier with 2.8 mW power consumption

This paper shows a fully integrated, ESD protected, low-power, low-voltage amplifier designed with a low-cost 0.18 mum SiGe technology. The amplifier achieves 11 dB gain, 8 dB noise figure at 23 GHz and 1 dB compression point of -18 dBm consuming 2.8 mW from the 0.7 V supply voltage. At this frequency the amplifier shows also 9 and 13 dB input and output return losses, respectively. Gain and power consumption results yield to a gain per power-supply figure of merit of 3.9 dB/mW, which is one of the highest reported for that frequency range