Observation of strong many-body effects in thin InN films grown on GaN buffer layers

Here, we present our new results following our studies of the temperatureand intensity-dependent photoluminescence (PL) spectra. We grew two samples of the InN thin films by using molecular-beam epitaxy. Both of the films were deposited on the 4-mum-thick semi-insulating GaN buffer layers. These buffer layers were directly grown on the (0001) sapphire substrates