Negative Resistance Regions in the Collector Characteristics of the Point-Contact Transistor

The negative resistance regions in the active portion of the point-contact collector characteristics are characterized in terms of three unique types of anomalies in the current multiplication properties of the device. While the interaction of the α anomalies and the associated circuitry result in a measuring circuit instability, the negative resistances are true device properties which are attributable to variations in the collection efficiency of the reverse biased collector junction.