Template-based MOSFET device model

This paper describes a novel method of representing the three-dimensional MOSFET current table. The method utilizes a template constructed from a drain sweep curve. This template is compressed/expanded and scaled to match all other possible drain sweep curves. This modeling technique provides more than a 10x reduction in storage space requirements, relative to a true three-dimensional table, with little loss in accuracy. It will also be shown that the method can be extended to model the intrinsic charge surfaces.<
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