Influences of the Silicon schottki FET Active Area Irregularity Upon Volt-Ampere Characteristics and Wunsch-Bell Dependency

In the paper the results of numerical calculations of heterogeneity influence of active area silicon FET on development of electrothermal processes in a crystal of the transistor from the beginning of avalanche breakdown before catastrophic thermal breakdown of the device stepping at achievement of values of a lattice temperature in the current cord area, the appropriate temperature of fusion Au of substrate are presented.