Physics-Technological Fabrication Features and Parameters of InP MM-Wave Gunn Diodes

We developed (i) a technology to form Au-Ge-TiB
_x
-Au ohmic contacts to indium phosphide Gunn diodes on the basis of n-n
⁺
-n
⁺⁺
epitaxial structures made on the standard and porous n
⁺⁺
-InP substrates, (ii) batch-fabrication technique for mesas with gold heat sink, and (iii) technique for diode chip packaging in a metal-quartz package. It is shown that the Gunn diodes of both types (on the standard and porous substrates) ensure generation of microwave power in the 88-98 GHz frequency range. When operating under normal climatic conditions and at a temperature no less than -40degC, the power output P
_out
of the Gunn diodes made on the porous substrates is over that of the ones made on the standard substrates. At package temperature of +75degC, the power output of the Gunn diodes of both types decreases, with P
_out
value of the diodes made on the porous substrate becoming somewhat below that of the ones made on the standard substrate. We suppose that the reason for P
_out
decrease is the temperature dependence of thermal conductivity which is different in the standard and porous InP