Thermal Reliability of Cu/low -κ(Black-DiamondTM, BD) Interconnects on Flexible Organic Substrate

This paper reports burn-in test results of Cu/low-K (BD) interconnects on flexible organic substrate (FR-4,0.1mm) and Si substrate. The electrical yields of via chains (via number: 11,182, via size: 0.26 to 0.5 mum) onto flexible organic substrate remain more than 50% and surviving via chains exhibit average resistance shift of 7.3% which is comparable to Si substrate (6.8%) after 524hrs (388hrs/75degC and 136hrs/150degC) burn-in tests