A 71.9% power-added-efficiency inverse Class-FLDMOS

Design and measured results of an inverse Class-F power amplifier for high efficiency operation built with an LDMOS transistor is reported in this paper. We describe the design methodology, in particular the choice of the optimum load impedance presented at the fundamental frequency and at the harmonics. Measurements performed at 1GHz on this stage power amplifier demonstrate at 2dB power gain compression; 71.9% power added efficiency, 13.2W output power and 16dB power gain. These performances, to our knowledge, represent the highest output power and gain reported for an inverse Class F power amplifier.