New Technological Approaches for the Fabrication of Planar Photonic Crystals on III-V Compounds

Summary form only given: We have developed new technological approaches for the fabrication of planar photonic crystals on III-V compounds. We have used electron beam (e-beam) lithography in combination with reactive ion beam etching (RIBE) and reactive ion etching (RIE) and different reactive and non-reactive chemistries (Ar, CCl
₂
F
₂
and Cl
₂
) to fabricate two-dimensional photonic crystals (planar) on GaAs-based semiconductor compounds. Also, we have used e-beam lithography on flowable oxides and epitaxial regrowth by molecular beam epitaxy (MBE) to obtain a photonic crystal nanopattern. Finally, focused ion beam etching (FIB) has been used to successfully fabricate photonic crystal structures on III-V semiconductor heterostructures