0.5 /spl mu/m AlGaAs/GaAs HMESFET technology for digital VLSI products

A 0.5 /spl mu/m AlGaAs/GaAs HMESFET technology has been developed and used to fabricate several high speed, high density circuits, such as a 2.5 ns 16 K static RAM and 1 GHz gate array and standard cell circuits. A family of channel-less DCFL/SBFL gate arrays with raw gate count ranging from 10 K to 100 K for commercial and military applications are currently in production.<
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