GaAs on InP MESFETs and circuits for OEICs

High performance FETs and circuits realized on GaAs layers heteroepitaxially grown on InP are described. Low parasitic effects are ascertained by noise and pulse measurements indicating a low electrical activity of the defects related to the lattice mismatch. 0.3 /spl mu/m gatelength laser drivers show satisfactory behavior at 10 Gbit/s. Device degradation observed after accelerated aging tests results from contact degradation rather than from mismatched materials problems. GaAs on InP FETs appear to be good candidates for 1.3-1.55 /spl mu/m OEICs.<
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