High performance narrow and wide bandwidth amplifiers in CPW-technology up to W-band

Several millimeter-wave MMICs were fabricated successfully using 0.16 /spl mu/m pseudomorphic MODFET technology. A five-stage distributed amplifier has 9.3 dB gain over the frequency range 5 GHz to 80 GHz and a noise figure less than 4.3 dB up to 60 GHz. A narrowband three-stage low noise amplifier delivers more than 21 dB gain between 70 and 80 GHz. For the first time Cascode transistors in CPW-technology were used for a distributed amplifier achieving a gain bandwidth product of 744 GHz*dB.<
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