Design and implementation of channel mobility measurement modules

Low-field majority carrier channel mobility profiles are determined by combining C-V and channel conductance measurements. The measurements can be used to determine majority carrier channel mobility profiles. The C-V data can also be used for the determination of doping profiles. The theory, the design of the test structures, and the measurement techniques are discussed. Experimental results are presented for a bipolar and a BiMOS process. In the BiMOS process, a deviation from existing mobility models was found.<
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