Test structure for evaluation of 1/f noise in CMOS technologies

A new test structure for evaluation of 1/f noise in CMOS technology is presented. The structure consists of both n-type and p-type MOS transistors with various geometrical dimensions. By direct measurements of the spectrum of drain current fluctuations of MOS transistors in the test structure, the dependences of 1/f noise on the transistor dimensions and bias conditions can be determined. From the measurement results the 1/f noise factor KF can be calculated.<
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