A 12 watt 20 GHz FET power amplifier

A state-of-the-art 20-GHz GaAs FET power amplifier with a maximum output of 12 W and 15.5% power-added efficiency has been developed. The amplifier utilizes a novel 2.0-W power FET design that incorporates partial-input impedance-matching circuitry on the FET die to improve bandwidth performance and repeatability. Single-ended and balanced power modules were combined with low-loss waveguide hybrids in a planar amplifier designed for integration into satellite systems. Each module was fabricated using space-flight-approved materials and processes.<
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