Silicon bipolar fixed and variable gain amplifier MMICs for microwave and lightwave applications up to 6 GHz

A variety of fixed and variable gain amplifier MMICs (monolithic microwave integrated circuits) for applications up to 6 GHz are presented. The circuits are fabricated using an f/sub T/=10 GHz, f/sub max/=20 GHz, nonpolysilicon-emitter silicon bipolar process. Three amplifier topologies and their performance are reported: a fixed-gain wideband amplifier, a high-gain low-noise amplifier than can also be effectively used as a transimpedance amplifier, and a variable gain amplifier. These MMICs illustrate the capability of silicon bipolar technology to offer cost-effective solutions for microwave applications up to 6 GHz and for digital lightwave applications up to 5 Gb/s.<
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