Novel self-planarizing CVD oxide for interlayer dielectric applications

This paper presents a highly-reliable interlayer dielectric process using a novel CVD method. The key to the process is a unique chemistry of SiH/sub 4/ and H/sub 2/O/sub 2/, which generates a liquid intermediate filling very narrow gaps and providing excellent planarity. Resistances of via-hole chains using this process are lower and more stable compared with those using P-TEOS and SOG process. This is due to a lower water content and a low absorption property of this self-planarizing CVD oxide.<
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