Improvement of thin oxide quality by hydrogen annealed wafer

Drastic improvement of a wafer quality has been carried out by high temperature anneal in hydrogen. A thin oxide formed on the hydrogen annealed wafer (HAI) has been found to have excellent behavior. In addition, electrical and physical evaluations verify that the HAI wafer does not have any disadvantage compared to the CZ wafer. The HAI wafer is promising for the substrate used in ULSI manufacture.<
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