Improved electrical characteristics of thin-film transistors fabricated on nitrogen implanted polysilicon films

In this work, we report the first study on thin-film transistors (TFT's) which were fabricated on nitrogen-implanted polysilicon thin films. Various nitrogen doses ranging from 2/spl times/10/sup 12/ to 2/spl times/10/sup 14/ ions/cm/sup 2/ were implanted into the active polysilicon films before the gate-oxide growth. It is found that the nitrogen implantation combined with the use of the H/sub 2/-plasma passivation significantly improved the electrical characteristics of the TFT's. It is believed that the passivation and donor effects of nitrogen were responsible for the improved characteristics.<
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