Extremely thin film (10 nm) SOI MOSFET characteristics including inversion layer to accumulation layer tunneling

Extremely thin film SOI MOSFET's (10 nm) without serious source/drain resistance have been fabricated using gate recessed structure, and their characteristics have been analyzed. The fabricated samples exhibit mobility decrease with the decrease of the silicon film thickness, and front gate bias dependent subthreshold slope behaviors. The tunneling current from the inverted front surface to the accumulated back surface, whose mechanism has not been reported so far, is observed.<
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