Self-aligned GaAs MISFET's with a low-temperature-grown GaAs gate insulator

GaAs MISFET's with a low-temperature-grown (LTG) GaAs gate insulator and ion-implanted self-aligned source and drain n/sup +/ regions are demonstrated. The resistivity and breakdown field of the LTG GaAs insulator were not changed appreciably by implantation and 800/spl deg/C activation annealing. The gate leakage current remained very low at a value of approximately 1 μA per μm
²
of gate area at 3 V forward gate bias. Because of the reduced source and drain resistance, the drain saturation current and the transconductance of self-aligned MISFET's increased more than twofold after ion implantation.