Hole trapping, substrate currents, and breakdown in thin silicon dioxide films [ in FETs ]

Using oxide-trapped-charge sensing techniques on FET's after high-field Fowler-Nordheim-stress, anode hole injection is shown to be important only for gate voltages larger than /spl ap/7.6 V for either p- or n-channel devices with n+ poly-Si gates independent of oxide thickness. These results do not support popular models for thin oxide degradation and "intrinsic" breakdown based on hole trapping in the oxide layer at lower voltages.<
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