Monte-Carlo study of high-frequency, large-signal transport parameters for physics based device simulation

High-frequency large-signal electron transport properties are studied by Monte-Carlo simulation considering n-GaAs as a model problem. It is demonstrated that the use of steady-state transport parameters is inadequate for simulating device operation at microwave and millimeter wave frequencies. The error of the relaxation time approximation, as commonly used in physics based device modeling, is investigated and possible improvements are indicated. A novel effective large-signal mobility approximation is proposed for simplified transport models in the upper microwave and millimeter wave range.<
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