MOVPE growth of strained InAsP/InGaAsP quantum-well structures for low threshold 1.3 /spl mu/m lasers

The authors report strained InAsP quantum-well structures emitting at 1.3 /spl mu/m that were grown by low-pressure metalorganic vapor phase epitaxy. Threshold current densities as low as 88 A/cm/sup 2/ were achieved with a graded-index separate-confinement-heterostructure single-quantum-well 40-/spl mu/m wide ridge stripe waveguide laser diode. This superior laser performance clearly demonstrates the high material quality of strained InAsP/InGaAsP quantum well structures for long wavelength optical device applications.<
>