Electronic properties of InP grown and annealed under controlled phosphorus atmosphere

By combining Hall-effect and capacitance methods it is shown that the annealing of InP under a phosphorus atmosphere causes predominantly a reduction of shallow donors, which is most likely correlated with an annihilation of intrinsic defects. Additionally two deep levels with activation energies of about 400 and 600 MeV are created or incorporated in the annealed material. Based on these results the electronic properties of heat treated nominally undoped semi-insulating InP can be explained.<
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