MeV energy ion implantation and its device applications in InP

MeV energy Si, S, Be, B, Fe, and Co implantations were performed in the energy range 0.4-20 MeV to obtain buried/thick n- or p- or high-resistance layers in InP. The first four range statistics have been established for these dopants in this energy range. Optimum annealing conditions have been established. Electron concentrations as high as 2 /spl times/ 10/sup 18/ cm/sup -3/ have been obtained. B, Fe, and Co implantations gave high resistivity layers. The usefulness of MeV implantation was demonstrated in the fabrication of vertical positive-intrinsic-negative (PIN) and varactor diodes.<
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