MOVPE of strained InGaAsP/InGaAsP MQW structures for laser applications

The authors present basic studies about the properties of compressively strained multi-quantum well (MQW) structures and their optimization for laser applications. Epitaxial growth of strained InGaAsP/InGaAsP MQW structures was performed in standard low pressure metal organic vapor phase epitaxial equipment. High resolution diffractometry measurements showed excellent agreement with simulations. Secondary ion mass spectrometry measurements showed good well to well homogeneity. By optimizing growth pauses and strain a best threshold current density was achieved.<
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