High quality InGaAs/InP quantum wires fabricated by electron beam lithography

The authors report the fabrication of high-quality quantum well wires (QWWs) by combining of electron-beam lithography, reverse-mesa wet etching, and metal organic vapor phase epitaxial overgrowth. They examined lateral size fluctuations of QWWs using atomic force microscopy. The results clearly show that size fluctuation is reduced by reverse-mesa etching. Furthermore, these QWWs show several clear quantum confinement effects for optical experiments which are the photoluminescence (PL) energy shift according to wire-size, the appearance of lateral quantized levels, and the change of optical anisotropy according to wire size in PL and electroluminescence.<
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