Resonant tunneling observed in InP/sub 0.69/Sb/sub 0.31//InAs-heterostructures grown by LP-MOVPE

The authors report on the observation of double barrier resonant tunneling in the lattice matched InP/sub 0.69/Sb/sub 0.31//InAs material system grown by metal organic vapor phase epitaxy. Layer sequences, I/V-characteristics and a theoretical treatment of resonant tunneling based on the transmission matrix method are presented in this novel material system. The PVC ratio (peak to valley current) and the maximum achievable peak current densities are figures of merit for resonant tunneling structures. These figures of merit are reported.<
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