Atmospheric pressure MOVPE growth with monolayer control of GaAs/AlGaAs doped and undoped superlattices for application to infrared detectors

In this presentation, it will be demonstrated that 50-period SLs with interface roughness, heterojunction abruptness, and layer thickness reproducibility of one atomic layer can be achieved by the atmospheric pressure MOVPE technique. We will also show that well controlled high doping levels, dopant position, and accurate measurement of the carrier density in the wells can be obtained, which are essential for making infrared photodetectors (IR PDs).<
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