Forward biased safe operating area of emitter switched thyristors

The physical mechanisms for current saturation and destructive failure of the dual channel emitter switched thyristor (EST) are described. Forward Biased Safe Operating Areas (FBSOAs) at short-circuit state of the 600 V and 2500 V dual channel ESTs are reported. It is demonstrated by numerical simulation that the EST offers a better FBSOA than the IGBT. Experimental measurements are reported that corroborate these calculated results.<
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