Characteristics of new dielectric isolation wafers for high voltage power IC's by single-Si poly-Si direct bonding (SPSDB) technique

Physical and mechanical characteristics of a new DI (Dielectric Isolation) wafer based on a single-Si poly-Si direct bonding (SPSDB) technique were investigated to reduce wafer warpage, increase wafer size and decrease minimum device patterning size. Developed SPSDB wafers of 5-inch size had unchanging warpage height and high bonding strength. When SPSDB wafers were bonded at 1100/spl deg/C for 2 h, the latter property was comparable to that of the thermal oxidizing layer interface.<
>