The effects of a dielectric capacitor layer and metallization on the propagation parameters of coplanar waveguide for MMIC

The study of coupling phenomena between lines laid on semiconductor substrates in monolithic microwave integrated circuit (MMIC) technologies and the determination of propagation effects on power FETs require the characterization of lines with micron transversal widths. For such lines, the influence of metallization thickness and dielectric cap layer on propagation properties can not be neglected. These effects are characterized for the case of coplanar lines laid on semiconductor substrates. The mathematical development used and the results obtained by a numerical technique are presented.<
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