Threshold current density of GaInAsP/InP quantum-box lasers

The laser threshold of three-dimensional GaInAsP/InP quantum-box lasers is analyzed. The optimized quantum-box array laser structure for the lowest threshold current density at room temperature is obtained theoretically, taking into account the effect of carrier leakage. The lowest threshold current densities are 14, 27, and 61 A/cm/sup 2/ for 10, 20, and 40 cm/sup -1/ of cavity loss, respectively. The threshold current density is calculated, taking into account fluctuation in quantum-box size. The ideal structure of the quantum-box laser is discussed. It is pointed out that the modulation-doped structure looks promising for the suppression of carrier leakage.<
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