Characterizing subthreshold behavior in poly-Si TFTs based on interface trap states

The subthreshold behavior in poly-Si TFTs (Thin Film Transistors) has been analyzed in detail. It has been demonstrated that the high subthreshold slope factor and the back bias dependence of the subthreshold characteristics can be reproduced by the model based on Si-SiO/sub 2/ interface trap states. The importance of reducing the interface trap density in poly-Si TFTs is shown.<
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