New dual gate doping process using in-situ boron doped-Si for deep sub-/spl mu/m CMOS device

A new gate doping process for deep sub-/spl mu/m dual gate CMOS is proposed. In-situ boron doped Si film was utilized for p/sup +/ polysilicon gate electrode for pMOSFET. On the other hand, nMOSFET gate was converted to n/sup +/ type using appropriate phosphorus diffusion in POCl/sub 3/ atmosphere. The deep sub-/spl mu/m dual gate CMOS process was demonstrated. There was no boron penetration to the channel or impurity redistribution between n and pMOSFET with sufficient high impurity concentration of both n/sup +/ and p/sup +/ polysilicon gate.<
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