Novel elevated silicide source/drain (ESSOD) by load-lock LPCVD-Si and advanced silicidation processing

The Si epitaxial growth layer on the active region was formed selectively under the low temperature condition of 620/spl deg/C without a conventional SEG system. This technology was achieved using the conventional low-temperature "Load-Lock LPCVD-Si" deposition system and selective etching with HNO/sub 3/, CH/sub 3/COOH and HF based solutions. Low resistive and low leakage shallow n/sup +p and p/sup +n junctions were realized by the E_levated S_ilicide So_urce/D_rain (ESSOD) structure using this technology. Furthermore, contact resistances of about 2.0/spl sim/3.O/spl Omega/ were obtained for 0.35/spl mu/m diameter with A_l-plug/c_ollimated Ti/TiN/Ti/T_i-silicide/e_pitaxial-Si c_ontact (ACTEC) structure on both n/sup +/- and p/sup +/-ESSOD regions.<
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