Device characteristics of 0.1 /spl mu/m MOSFET with RONO (reoxidized nitrided oxide) gate dielectrics

In this paper, we report for the first time on the mobility and reliability characteristics in 0.1 /spl mu/m gate MOSFET with RONO as gate dielectrics. The nand p-channel LDD FETs used in this study were fabricated on 6-inch (100) p-type silicon wafers.<
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