Low temperature back surface passivation for thin silicon solar cells

In this paper, the authors present an effective low temperature back surface passivation technique. This process uses plasma enhanced chemical vapor deposited (PECVD) oxide for thin silicon solar cells that are mechanically supported or free standing. Experimental results show that PECVD oxide, deposited at 300/spl deg/C and followed by a heat treatment at 350 to 400/spl deg/C in forming gas, can result in a back surface recombination velocity as low as 7000 cm/s. This process can be used to replace oxidation or back surface field formation where temperature is a constraint. This technique can be extended to front surface passivation as well.<
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