Major improvement in material and device stability of a-Si:H and establishment of high stabilized efficiency of single junction a-Si solar cells

Optimizing PECVD processing has further reduced the structural defects in intrinsic a-Si:H films. Using a proprietary technique, photoconductivity-stable, highly photoelectric-sensitive a-Si i-layers have been fabricated. This improved material has been successfully incorporated into high efficiency single junction solar cell devices with significantly improved stability. At present, a stabilized device efficiency of 7.7% has been established.<
>