High efficiency a-Si:H solar cells by single chamber method

High efficiency hydrogenated amorphous silicon (a-Si:H) solar cells were developed by plasma chemical vapor deposition (P-CVD) using a single chamber. Three techniques to improve the cell efficiency are developed and discussed; (1) obtaining ohmic contact with low resistance at the TCO/p-layer junction employing a-SiO/sub x/ film for TCO/p-layer interface; (2) application of high quality p-type a-SiC:H films by using a two types of doping gas, trimethylboron(TMB) and B/sub 2/H/sub 6/; and (3) zinc oxide (ZnO)/Ag films were used as the back electrode layer. Application of the above three techniques to a single cell of 2.8 cm/sup 2/ size results in the increase of the conversion efficiency above 11.7%.<
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